型号 NGB8204ANT4G
厂商 ON Semiconductor
描述 IGBT IGNIT N-CH 18A 430V D2PAK-3
NGB8204ANT4G PDF
代理商 NGB8204ANT4G
标准包装 1
电压 - 集电极发射极击穿(最大) 430V
Vge, Ic时的最大Vce(开) 2V @ 4.5V,10A
电流 - 集电极 (Ic)(最大) 18A
功率 - 最大 115W
输入类型 逻辑
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 D2PAK
包装 标准包装
其它名称 NGB8204ANT4GOSDKR
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